Raman Measurements and Stress Analysis in Gal- lium Ion Implanted Gallium Nitride Epitaxial Lay- ers on Sapphire
نویسندگان
چکیده
In this article, we estimate hydrostatic stress developed in gallium ion implanted gallium nitride epitaxial layers using Raman measurements. We have calculated deformation potential constants for E2(high) mode in these epi-layers. The presence of a polar phonon-plasmon coupling in these systems has also been demonstrated. In as-implanted samples, with an increase in implantation fluence, we have observed disorder-activated Raman scattering.
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